Impurity Diffusion and Gettering in Silicon: Volume 36

Explore the intricate world of semiconductor physics with Impurity Diffusion and Gettering in Silicon: Volume 36 by Richard B. Fair. Published in 2014 by Cambridge University Press, this comprehensive volume spans 300 pages and serves as an essential reference for researchers and practitioners in the field. Delve into critical topics such as absorption and adsorption, diffusion, and the behavior of gases within silicon materials. This book is a valuable addition to the MRS Symposium Proceeding series, which is renowned for its contribution to the understanding of semiconductor technologies. Whether you are a seasoned expert or a newcomer to the field, this volume provides the insights and knowledge necessary to advance your research and applications in silicon technology.